ALEXANDRIA, Va., April 9 -- United States Patent no. 12,270,768, issued on April 8, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).
"Method of processing a cleaved semiconductor wafer" was invented by Benjamin Michael Meyer (Defiance, Mo.), Justin Scott Kayser (Wentzville, Mo.), John F. Valley (Lake Oswego, Ore.), James Dean Eoff (Montgomery, Mo.), Vandan Tanna (O'Fallon, Mo.) and William L. Luter (St. Charles, Mo.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of detecting defects on a semiconductor wafer includes directing diffuse light to the semiconductor wafer and reflecting the diffuse light off of the semiconductor wafer. The method further includes detecting the diffuse light with a...