ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,611, issued on April 22, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor structure" was invented by Po Jung Lin (Hsinchu, Taiwan) and Tzu-Yao Lin (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a first nitride layer, a second nitride layer, a third nitride layer, and a polarity inversion layer. The first nitride layer is formed on the substrate, and the polarity inversion layer formed at a surface of the first nitride layer converts a non-metallic polar surface of the first nitride layer into a metallic polar surface of the polarity inversion layer. The second nit...