ALEXANDRIA, Va., June 6 -- United States Patent no. 12,281,411, issued on April 22, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).
"Epitaxial structure" was invented by Jia-Zhe Liu (Hsinchu, Taiwan), Tzu-Yao Lin (Hsinchu, Taiwan) and Ying-Ru Shih (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An epitaxial structure including at least a substrate, a nucleation layer, a buffer layer, a channel layer, a barrier layer, and a P-type aluminum indium gallium nitride layer is provided. The nucleation layer is formed on the substrate; the buffer layer is formed on the nucleation layer; the channel layer is formed on the buffer layer; the barrier layer is formed on the channel layer; and the...