ALEXANDRIA, Va., June 5 -- United States Patent no. 12,276,043, issued on April 15, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).
"Silicon carbide ingot and method of fabricating the same" was invented by Ching-Shan Lin (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide ingot is provided, which includes a seed end, and a dome end opposite to the seed end. In the silicon carbide ingot, a ratio of the vanadium concentration to the nitrogen concentration at the seed end is in a range of 5:1 to 11:1, and a ratio of the vanadium concentration to the nitrogen concentration at the dome end is in a range of 2:1 to 11:1."
The patent was filed on July 27, 2021, under Applicat...