US Patent Issued to GLOBALWAFERS JAPAN, TOHOKU UNIVERSITY on July 29 for "Silicon wafer and method for producing silicon wafer" (Japanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,371,813, issued on July 29, was assigned to GLOBALWAFERS JAPAN Co. LTD. (Niigata, Japan) and TOHOKU UNIVERSITY (Miyagi, Japan).

"Silicon wafer and method for producing silicon wafer" was invented by Haruo Sudo (Niigata, Japan), Takashi Ishikawa (Niigata, Japan), Koji Izunome (Niigata, Japan), Hisashi Matsumura (Niigata, Japan), Tatsuhiko Aoki (Niigata, Japan), Shoji Ikeda (Miyagi, Japan), Tetsuo Endoh (Miyagi, Japan) and Etsuo Fukuda (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon wafer is a Czochralski wafer formed of silicon. The wafer includes a bulk layer having an oxygen concentration of 0.5x1018/cm3 or more; and a surface l...