US Patent Issued to GLOBALFOUNQRIES Singapore on Jan. 13 for "Transistors having backside contact structures" (Singaporean Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,537, issued on Jan. 13, was assigned to GLOBALFOUNQRIES Singapore Pte. Ltd. (Singapore).

"Transistors having backside contact structures" was invented by Bong Woong Mun (Singapore), Athena Jacinto Antonio (Singapore) and Jeoung Mo Koo (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor is provided. The transistor includes a substrate, a first diffusion region, a first contact structure, a second diffusion region, a second contact structure, and a gate structure. The first diffusion region is in the substrate. The first contact structure is over the substrate electrically coupling the first diffusion region. The first contact struc...