US Patent Issued to GLOBALFOUNDRIES U.S. on Sept. 9 for "Semiconductor device with different sized epitaxial structures" (New York Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,343, issued on Sept. 9, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"Semiconductor device with different sized epitaxial structures" was invented by Jianwei Peng (Clifton Park, N.Y.) and Hong Yu (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus has a first gate structure of a core device on a substrate, a first L-shaped spacer covering a sidewall of the first gate and part of the substrate adjacent to the first gate, a first raised source/drain (S/D) structure on the substrate and spaced apart from the first gate by the first L-shaped spacer, a second gate of an I/O device on the substrate, a second L-shap...