US Patent Issued to GlobalFoundries U.S. on Sept. 30 for "Structure having different gate dielectric widths in different regions of substrate" (New York Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,014, issued on Sept. 30, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Structure having different gate dielectric widths in different regions of substrate" was invented by Anton V. Tokranov (Halfmoon, N.Y.), Hong Yu (Clifton Park, N.Y.) and Edward P. Reis Jr. (Ballston Spa, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure and method of forming different high dielectric constant (high-K) gate dielectrics for different transistors on the same substrate, are disclosed. A first region includes a first transistor(s) on the substrate having a first gate structure having a first gate body over a first high-K gate dielectric. The...