US Patent Issued to GlobalFoundries U.S. on Sept. 30 for "Field plate structure to reduce self-heating in transistor and related method" (Vermont, New York Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,000, issued on Sept. 30, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Field plate structure to reduce self-heating in transistor and related method" was invented by Rainer Thoma (Jeffersonville, Vt.), Oscar D. Restrepo (Clifton Park, N.Y.), Zhong-Xiang He (Essex, Vt.) and Ajay Raman (Essex Junction, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure includes a transistor, e.g., HEMT, with a field plate positioned laterally to a side of an active gate and including a first portion extending over the active gate. A dielectric layer isolates a lower surface of the first portion from an upper surface of the active gate. A field...