US Patent Issued to GlobalFoundries U.S. on Sept. 30 for "Electrically programmable fuse over lateral bipolar transistor" (Vermont Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,910, issued on Sept. 30, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Electrically programmable fuse over lateral bipolar transistor" was invented by Anindya Nath (Essex Junction, Vt.), Ephrem G. Gebreselasie (South Burlington, Vt.), Rajendran Krishnasamy (Essex Junction, Vt.) and Alain F. Loiseau (Williston, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure provide a circuit structure including an electrically programmable fuse (efuse) and lateral bipolar transistor. A structure of the disclosure includes a lateral bipolar transistor within a semiconductor layer and over a substrate. An insulator layer i...