US Patent Issued to GLOBALFOUNDRIES U.S. on Sept. 30 for "Capacitor integrated with memory element of memory cell" (California, New York Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,936, issued on Sept. 30, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"Capacitor integrated with memory element of memory cell" was invented by Venkatesh P. Gopinath (Fremont, Calif.), Joseph Versaggi (Saratoga Springs, N.Y.), Gregory A. Northrop (Ballston Spa, N.Y.) and Bipul C. Paul (Mechanicville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to a capacitor integrated with a memory element of a memory cell and methods of manufacture. The structure includes: at least one memory cell comprising a memory element with a top conductor material; and a ...