US Patent Issued to GlobalFoundries U.S. on Sept. 23 for "Resistive memory elements accessed by bipolar junction transistors" (California, New York Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,278, issued on Sept. 23, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Resistive memory elements accessed by bipolar junction transistors" was invented by Venkatesh P. Gopinath (Fremont, Calif.), Alexander Derrickson (Saratoga Springs, N.Y.) and Hongru Ren (Mechanicville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures that include resistive memory elements and methods of forming a structure that includes resistive memory elements. The structure comprises a bipolar junction transistor including a base, a first terminal having a first raised semiconductor layer over the base, and a second terminal having a second raised se...