US Patent Issued to GlobalFoundries U.S. on Sept. 23 for "IC device with vertically-graded silicon germanium region adjacent device channel and method for forming" (New York Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,315, issued on Sept. 23, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"IC device with vertically-graded silicon germanium region adjacent device channel and method for forming" was invented by Judson Robert Holt (Ballston Lake, N.Y.) and George Robert Mulfinger (Queensbury, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device is disclosed which includes a first transistor over a substrate. The first transistor includes a gate over the substrate and between a source region and a drain region. The transistor further includes a first region of vertically-graded silicon germanium ("SiGe") adjacent a first si...