US Patent Issued to GlobalFoundries U.S. on Sept. 2 for "Forksheet semiconductor structure including at least one bipolar junction transistor and method" (American, German Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,417, issued on Sept. 2, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Forksheet semiconductor structure including at least one bipolar junction transistor and method" was invented by Arkadiusz Malinowski (Dresden, Germany) and Alexander M. Derrickson (Saratoga Springs, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a forksheet semiconductor structure and a method of forming the structure. The structure can include a dielectric body with a first sidewall and a second sidewall opposite the first sidewall. The structure can include a first transistor, which incorporates first semiconductor nanosheet(s) positioned laterall...