US Patent Issued to GLOBALFOUNDRIES U.S. on Sept. 16 for "Temperature detection using negative temperature coefficient resistor in GaN setting" (Vermont, New York, Texas Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,416,530, issued on Sept. 16, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"Temperature detection using negative temperature coefficient resistor in GaN setting" was invented by Santosh Sharma (Austin, Texas), Michael J. Zierak (Colchester, Vt.), Steven J. Bentley (Menands, N.Y.) and Johnatan Avraham Kantarovsky (South Burlington, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure includes a negative temperature coefficient (NTC) resistor for use in gallium nitride (GaN) technology. The NTC resistor includes a p-type doped GaN (pGaN) layer, and a gallium nitride (GaN) heterojunction structure under the pGaN layer. The GaN heteroj...