US Patent Issued to GlobalFoundries U.S. on Oct. 28 for "Photodetector structure with air gap and related methods" (Vermont Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,823, issued on Oct. 28, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Photodetector structure with air gap and related methods" was invented by Siva P. Adusumilli (South Burlington, Vt.), Ramsey Hazbun (Colchester, Vt.), John J. Ellis-Monaghan (Grand Isle, Vt.) and Rajendran Krishnasamy (Essex Junction, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photodetector structure includes a first semiconductor material layer over a doped well in a substrate. The photodetector structure includes an air gap vertically between the first semiconductor material layer and a first portion of the doped well. The photodetector structure includes a...