US Patent Issued to GlobalFoundries U.S. on Oct. 21 for "IC structure for connected capacitances and method of forming same" (German Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,178, issued on Oct. 21, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"IC structure for connected capacitances and method of forming same" was invented by Germain Bossu (Dresden, Germany) and Nigel Chan (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) structure, including a semiconductor-on-insulator (SOI) substrate, the SOI substrate including a buried insulator layer over a base semiconductor layer, and a semiconductor-on-insulator (SOI) layer over the buried insulator layer. The IC structure further includes a gate over a gate dielectric layer over the SOI layer. The IC structure includes an n...