US Patent Issued to GlobalFoundries U.S. on Oct. 14 for "Structure and method of forming spacers on unfaceted raised source/drain regions" (New York Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,307, issued on Oct. 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Structure and method of forming spacers on unfaceted raised source/drain regions" was invented by George R. Mulfinger (Wilton, N.Y.), Md Nasir Uddin Bhuyian (Cohoes, N.Y.), Shesh Mani Pandey (Saratoga Springs, N.Y.), Adam S. Rosenfeld (Ballston Spa, N.Y.) and Selina A. Mala (Ballston Spa, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a semiconductor structure and method of forming the structure. The structure has a semiconductor layer. A gate structure is located on the semiconductor layer. The gate structure has a sidewall spacer having a first sec...