US Patent Issued to GlobalFoundries U.S. on Oct. 14 for "Junction field-effect transistors implemented in a wide bandgap semiconductor material" (New Mexico, California Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,270, issued on Oct. 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Junction field-effect transistors implemented in a wide bandgap semiconductor material" was invented by Francois Hebert (San Mateo, Calif.) and James A. Cooper (Santa Fe, N.M.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures for a junction field-effect transistor and methods of forming such structures. The structure comprises a semiconductor substrate including a trench, and a source including a doped region in the semiconductor substrate adjacent to the trench. The doped region and the semiconductor substrate have the same conductivity type. The doped region ...