ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,784, issued on Nov. 4, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).
"Isolation structures of semiconductor devices" was invented by Hong Yu (Clifton Park, N.Y.) and David Pritchard (Schenectady, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a substrate, a first gate electrode, a second gate electrode, and an isolation structure. The first gate electrode is over the substrate and the second gate electrode is laterally adjacent thereto. The isolation structure is in contact with the first gate electrode and the second gate electrode."
The patent was filed on Oct. 1...