US Patent Issued to GlobalFoundries U.S. on Nov. 4 for "Isolation stack for a bipolar transistor and related methods" (Vermont Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,746, issued on Nov. 4, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Isolation stack for a bipolar transistor and related methods" was invented by Jacob M. DeAngelis (Essex Junction, Vt.), Uppili S. Raghunathan (Essex Junction, Vt.), Steven M. Shank (Jericho, Vt.), Sarah A. McTaggart (Essex Junction, Vt.), Megan Elizabeth Lydon-Nuhfer (Essex Junction, Vt.) and Cameron Luce (Colchester, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure provides an isolation stack for a bipolar transistor (BT), and related methods. A structure of the disclosure includes a first isolation layer on a subcollector. A first air gap is between th...