ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,745, issued on Nov. 4, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).
"Bipolar junction transistor arrays" was invented by Alexander Derrickson (Saratoga Springs, N.Y.), Venkatesh Gopinath (Fremont, Calif.), John J. Pekarik (Underhill, Vt.), Hong Yu (Clifton Park, N.Y.), Vibhor Jain (Essex Junction, Vt.) and David Pritchard (Glenville, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Structures that include bipolar junction transistors and methods of forming such structures. The structure comprises a semiconductor layer, a substrate, and a dielectric layer disposed between the semiconductor layer and the substrate. The structure further ...