US Patent Issued to GlobalFoundries U.S. on Nov. 11 for "Array arrangements of vertical bipolar junction transistors" (Vermont, New York, California Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,294, issued on Nov. 11, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Array arrangements of vertical bipolar junction transistors" was invented by John J. Pekarik (Underhill, Vt.), Hong Yu (Clifton Park, N.Y.), Vibhor Jain (Essex Junction, Vt.), Alexander Derrickson (Saratoga Springs, N.Y.) and Venkatesh Gopinath (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures that include bipolar junction transistors and methods of forming such structures. The structure comprises a substrate having a top surface, a trench isolation region in the substrate, and a base layer on the top surface of the substrate. The base layer ex...