US Patent Issued to GlobalFoundries U.S. on May 6 for "Trench isolation having three portions with different materials, and LDMOS FET including same" (New York, Vermont Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,295,161, issued on May 6, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Trench isolation having three portions with different materials, and LDMOS FET including same" was invented by Rong-Ting Liou (Malta, N.Y.), Man Gu (Malta, N.Y.), Jeffrey B. Johnson (Essex Junction, Vt.), Wang Zheng (Ballston Lake, N.Y.), Jagar Singh (Clifton Park, N.Y.) and Haiting Wang (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An IC structure that includes a trench isolation (TI) in a substrate having three portions of different dielectric materials. The portions may also have different widths. The TI may include a lower portion including a fir...