ALEXANDRIA, Va., June 10 -- United States Patent no. 12,294,364, issued on May 6, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).
"Transistor with integrated turn-off slew rate control" was invented by Santosh Sharma (Austin, Texas) and Mei Yu Soh (Singapore).
According to the abstract* released by the U.S. Patent & Trademark Office: "A circuit structure includes an enhancement mode transistor and a turn-off slew rate controller for automatically adding drain-source capacitance to the transistor when the transistor is transitioning to an off state. The added drain-source capacitance slows the turn-off slew rate (dV/dt_off) of the transistor without also increasing the turn-off energy loss (E_off). The slew rate controller can inc...