US Patent Issued to GlobalFoundries U.S. on May 27 for "High electron mobility transistors having barrier liners and integration schemes" (Vermont Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,562, issued on May 27, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"High electron mobility transistors having barrier liners and integration schemes" was invented by Ramsey Hazbun (Colchester, Vt.), Anthony Stamper (Burlington, Vt.), Zhong-Xiang He (Essex Junction, Vt.) and Pernell Dongmo (Williston, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor structure is provided, the structure may be for a high electron mobility transistor (HEMT). The HEMT comprises a channel layer arranged over a substrate, the channel layer may have a top surface. A barrier layer may be arranged over the channel layer. A first opening may be in ...