US Patent Issued to GlobalFoundries U.S. on March 4 for "High electron mobility transistor devices having a silicided polysilicon layer" (Vermont, New York Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,935, issued on March 4, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"High electron mobility transistor devices having a silicided polysilicon layer" was invented by Vibhor Jain (Clifton Park, N.Y.), Johnatan Avraham Kantarovsky (South Burlington, Vt.), Mark David Levy (Williston, Vt.), Ephrem Gebreselasie (South Burlington, Vt.), Yves Ngu (Birchwood Drive Hinesburg, Vt.) and Siva P. Adusumilli (South Burlington, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates generally to structures in semiconductor devices and methods of forming the same. More particularly, the present disclosure relates to high electr...