US Patent Issued to GlobalFoundries U.S. on March 18 for "Field effect transistors with dual field plates" (Vermont Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,235, issued on March 18, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Field effect transistors with dual field plates" was invented by Johnatan Avraham Kantarovsky (South Burlington, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor structure is provided, the transistor structure comprising a source, a drain, and a gate between the source and the drain. The gate may have a top surface. A first field plate may be between the source and the drain. The first field plate may be L-shaped and having a vertical portion over a horizontal portion. A top surface of the vertical portion of the first field plate may be at least as hi...