US Patent Issued to GlobalFoundries U.S. on June 3 for "Photodetectors with multiple light-absorbing semiconductor layers" (New York, Vermont Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,321,009, issued on June 3, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Photodetectors with multiple light-absorbing semiconductor layers" was invented by Abdelsalam Aboketaf (Essex Junction, Vt.), Yusheng Bian (Ballston Lake, N.Y.) and Won Suk Lee (Malta, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures for a photonic chip that include a photodetector and methods of forming such structures. The structure comprises a photodetector including a pad, a first semiconductor layer on the pad, and a second semiconductor layer on the pad. The second semiconductor layer is laterally spaced from the first semiconductor layer. The structu...