US Patent Issued to GLOBALFOUNDRIES U.S. on June 3 for "Laterally diffused metal-oxide semiconductor with gate contact" (New York Inventor)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,217, issued on June 3, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"Laterally diffused metal-oxide semiconductor with gate contact" was invented by Jagar Singh (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to a laterally diffused metal-oxide semiconductor with one or more gate contacts and methods of manufacture. The structure includes: sidewall spacers over a semiconductor substrate; and a gate structure within a space defined by the sidewall spacers. The gate structure includes: a plurality of gate materials over the semiconductor su...