US Patent Issued to GLOBALFOUNDRIES U.S. on June 3 for "Heterojunction bipolar transistor with buried trap rich isolation region" (Vermont Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,227, issued on June 3, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"Heterojunction bipolar transistor with buried trap rich isolation region" was invented by Vibhor Jain (Williston, Vt.), John J. Ellis-Monaghan (Grand Isle, Vt.), Anthony K. Stamper (Burlington, Vt.), Steven M. Shank (Jericho, Vt.) and John J. Pekarik (Underhill, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors (HBTs) with a buried trap rich isolation region and methods of manufacture. The structure includes: a first heterojunction bipolar transistor;...