US Patent Issued to GLOBALFOUNDRIES U.S. on June 24 for "Bipolar transistor" (Vermont, New York Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,555, issued on June 24, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"Bipolar transistor" was invented by Uppili Srinivasan Raghunathan (Essex Junction, Vt.), Steven M. Shank (Jericho, Vt.), Sarah Ann McTaggart (Essex Junction, Vt.), Megan Elizabeth Lydon-Nuhfer (Essex Junction, Vt.), Cameron Ezera Luce (Colchester, Vt.), Ramsey Hazbun (Colchester, Vt.) and Alexander M. Derrickson (Saratoga Springs, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor and methods of manufacture. The structure includes: a collector region; an extrinsi...