US Patent Issued to GLOBALFOUNDRIES U.S. on June 17 for "Vertical device triggered silicon control rectifier" (Vermont, Massachusetts, New York Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,302, issued on June 17, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"Vertical device triggered silicon control rectifier" was invented by Sagar Premnath Karalkar (Chelmsford, Mass.), Alain Francois Loiseau (Williston, Vt.), Vibhor Jain (Clifton Park, N.Y.) and Wei Liang (South Burlington, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to a device triggered silicon control rectifier (SCR) and methods of manufacture. the structure includes: a vertical silicon controlled rectifier having a diffusion region in a well of a semiconductor substrate; a vertic...