US Patent Issued to GLOBALFOUNDRIES U.S. on June 17 for "Lateral bipolar transistor with gated collector" (New York, Vermont Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,243, issued on June 17, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"Lateral bipolar transistor with gated collector" was invented by Alexander Derrickson (Saratoga Springs, N.Y.), Vibhor Jain (Williston, Vt.), Judson R. Holt (Ballston Lake, N.Y.), Jagar Singh (Clifton Park, N.Y.) and Mankyu Yang (Fishkill, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor with gated collector and methods of manufacture. The structure includes: an extrinsic base region vertically over a semiconductor substrate and comprising asymmetrical ...