US Patent Issued to GlobalFoundries U.S. on June 17 for "IC structure with MFMIS memory cell and CMOS transistor" (German Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,230, issued on June 17, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"IC structure with MFMIS memory cell and CMOS transistor" was invented by Stefan Dunkel (Dresden, Germany), Dominik Martin Kleimaier (Dresden, Germany), Halid Mulaosmanovic (Dresden, Germany), Johannes Muller (Dresden, Germany) and Sven Beyer (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "An IC structure includes an MFMIS memory cell on a semiconductor substrate, and a CMOS transistor adjacent the MFMIS memory cell on the same semiconductor substrate. A method provides co-integration of the MFMIS memory cell with the CMOS transistor. The method may opt...