US Patent Issued to GlobalFoundries U.S. on June 17 for "Heterojunction bipolar transistors with a cut stress liner" (Vermont, Connecticut Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,206, issued on June 17, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Heterojunction bipolar transistors with a cut stress liner" was invented by Vibhor Jain (Essex Junction, Vt.), Jeffrey Johnson (Essex Junction, Vt.), Viorel Ontalus (Unionville, Conn.) and John J. Pekarik (Underhill, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. The structure comprises an emitter, a collector including a first section, a second section, and a third section positioned in a first direction between the first section and the s...