US Patent Issued to GLOBALFOUNDRIES U.S. on June 17 for "Field effect transistor with shallow trench isolation features within source/drain regions" (Vermont Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,285, issued on June 17, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"Field effect transistor with shallow trench isolation features within source/drain regions" was invented by Anthony K. Stamper (Burlington, Vt.), Uzma Rana (Slingerlands, Vt.), Siva P. Adusumilli (South Burlington, Vt.) and Steven M. Shank (Jericho, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to field effect transistors and methods of manufacture. The structure includes: at least one gate structure comprising source/drain regions; and at least one isolation structure perpendicular...