US Patent Issued to GLOBALFOUNDRIES U.S. on June 17 for "Bonding structure using two oxide layers with different stress levels, and related method" (New York, Connecticut Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,461, issued on June 17, was assigned to GLOBALFOUNDRIES U.S. INC. (Malta, N.Y.).

"Bonding structure using two oxide layers with different stress levels, and related method" was invented by Jorge A. Lubguban (Danbury, Conn.), Sarah H. Knickerbocker (Poughkeepsie, N.Y.), Lloyd Burrell (Poughkeepsie, N.Y.), John J. Garant (Poughkeepsie, N.Y.) and Matthew C. Gorfien (Saratoga Springs, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bonding structure for a semiconductor substrate and related method are provided. The bonding structure includes a first oxide layer on the semiconductor substrate, and a second oxide layer on the first oxide layer, the ...