US Patent Issued to GlobalFoundries U.S. on July 8 for "Gate tunnel current-triggered semiconductor controlled rectifier" (Indian, American Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,644, issued on July 8, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Gate tunnel current-triggered semiconductor controlled rectifier" was invented by Anupam Dutta (Kolkata, India), Satyasuresh Vvss Choppalli (Bangalore, India), Rajendran Krishnasamy (Essex Junction, Vt.), Robert J. Gauthier Jr. (Williston, Vt.) and Anindya Nath (Essex Junction, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed structures include a semiconductor controlled rectifier or bi-directional semiconductor controlled rectifier with a trigger voltage (Vtrig) that is tunable. Some structures include a semiconductor controlled rectifier with an Nwell and P...