US Patent Issued to GlobalFoundries U.S. on July 29 for "Integrated circuit structures with conductive pathway through resistive semiconductor material" (Vermont Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,385, issued on July 29, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Integrated circuit structures with conductive pathway through resistive semiconductor material" was invented by Anindya Nath (Essex Junction, Vt.), Rajendran Krishnasamy (Essex Junction, Vt.) and Robert J. Gauthier Jr. (Williston, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) structure with a conductive pathway through resistive semiconductor material, e.g., for bipolar transistors, is provided. The IC structure may include a resistive semiconductor material having a first end coupled to a first doped semiconductor material. The first do...