US Patent Issued to GLOBALFOUNDRIES U.S. on July 1 for "Photodiode with insulator layer along intrinsic region sidewall" (Vermont Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,500, issued on July 1, was assigned to GLOBALFOUNDRIES U.S. INC. (Malta, N.Y.).

"Photodiode with insulator layer along intrinsic region sidewall" was invented by Rajendran Krishnasamy (Essex Junction, Vt.), John J. Ellis-Monaghan (Grand Isle, Vt.), Siva P. Adusumilli (South Burlington, Vt.) and Ramsey M. Hazbun (Colchester, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photodiode and a related method of manufacture are disclosed. The photodiode includes a transfer gate and a floating diffusion adjacent to the transfer gate. In addition, the photodiode includes an upper terminal; an intrinsic semiconductor region in contact with the upper termi...