ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,374, issued on July 1, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).
"Lateral bipolar transistors" was invented by Hong Yu (Clifton Park, N.Y.), Judson R. Holt (Ballston Lake, N.Y.) and Alexander Derrickson (Saratoga Springs, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base having at least one sidewall with a gradient concentration of semiconductor material; an emitter on a first side of the extrinsic base; and a collector on a second side of the extrinsi...