US Patent Issued to GlobalFoundries U.S. on July 1 for "High-voltage semiconductor device structures" (New York Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,459, issued on July 1, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"High-voltage semiconductor device structures" was invented by Man Gu (Malta, N.Y.) and Haiting Wang (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Device structures for a high-voltage semiconductor device and methods of forming such device structures. The structure comprises a semiconductor substrate including a trench, and a field-effect transistor including a first and second source/drain regions in the semiconductor substrate, a gate dielectric inside the trench, and a gate on the gate dielectric. The gate and the gate dielectric are disposed later...