US Patent Issued to GlobalFoundries U.S. on Jan. 27 for "Structure providing poly-resistor under shallow trench isolation and above high resistivity polysilicon layer" (Vermont Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,501, issued on Jan. 27, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Structure providing poly-resistor under shallow trench isolation and above high resistivity polysilicon layer" was invented by Michael J. Zierak (Colchester, Vt.), Siva P. Adusumilli (South Burlington, Vt.), Yves T. Ngu (Essex Junction, Vt.) and Steven M. Shank (Jericho, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure provide a method, including forming a shallow trench isolation (STI) in a substrate. The method further includes doping the substrate with a noble dopant, thereby forming a disordered crystallographic layer under the STI. ...