ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,579, issued on Jan. 27, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).
"Semiconductor structure including sectioned well region" was invented by Navneet Jain (Milpitas, Calif.), Nigel Chan (Dresden, Germany) and Mahbub Rashed (Cupertino, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a semiconductor structure including a substrate with a first type conductivity (e.g., a P-silicon substrate); a deep well region within the substrate and having a second type conductivity (e.g., a deep Nwell); alternating stripes of first and second well regions (e.g., of Pwells and Nwells with each Pwell positioned laterally between and ab...