US Patent Issued to GLOBALFOUNDRIES U.S. on Jan. 27 for "High-electron-mobility transistor with field plate and sidewall spacers" (Vermont, New York, Texas Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,550, issued on Jan. 27, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"High-electron-mobility transistor with field plate and sidewall spacers" was invented by Santosh Sharma (Austin, Texas), Michael J. Zierak (Colchester, Vt.), Steven J. Bentley (Menands, N.Y.) and Mark D. Levy (Williston, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor (HEMT) and methods of manufacture. The structure includes: a gate structure; a source contact and a drain contact adjacent to the gate structure; and a field plate electrically isol...