US Patent Issued to GlobalFoundries U.S. on Jan. 20 for "Structure with back-gate having oppositely doped semiconductor regions" (German, Indian Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,501, issued on Jan. 20, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Structure with back-gate having oppositely doped semiconductor regions" was invented by Zhixing Zhao (Dresden, Germany), Tom Herrmann (Dresden, Germany) and Jegadheesan Venkatesan (Vellore, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure provide a structure with a back-gate having oppositely doped semiconductor regions. The structure may include a transistor over a substrate. The transistor includes a gate structure having a gate length. A back-gate region is within the substrate below the gate structure of the transistor. The back-ga...