US Patent Issued to GlobalFoundries U.S. on Jan. 20 for "Semiconductor structure with isolation region including combination of deep and shallow trench isolation structures and method" (New York, Georgia Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,514, issued on Jan. 20, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Semiconductor structure with isolation region including combination of deep and shallow trench isolation structures and method" was invented by Anton V. Tokranov (Halfmoon, N.Y.), James P. Mazza (Saratoga Springs, N.Y.), Eric Scott Kozarsky (Gansevoort, N.Y.), Elizabeth A. Strehlow (Cleveland, Ga.), Vitor A. Vulcano Rossi (Saratoga Springs, N.Y.) and Hong Yu (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a semiconductor structure and method of forming the semiconductor structure. Specifically, the semiconductor structure can include a f...