US Patent Issued to GlobalFoundries U.S. on Jan. 13 for "Substrate biasing for bidirectional high electron mobility transistor device" (Texas Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,021, issued on Jan. 13, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Substrate biasing for bidirectional high electron mobility transistor device" was invented by Santosh Sharma (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a semiconductor device, including: a high electron mobility transistor (HEMT) bidirectional switch including: a first source at a first potential; a second source at a second potential different than the first potential; and a substrate; and a biasing circuit, coupled to the first source of the bidirectional switch and the second source of the bidirectiona...