US Patent Issued to GlobalFoundries U.S. on Feb. 3 for "Memory structure including a low cell supply voltage programming circuit" (California Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,542,178, issued on Feb. 3, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Memory structure including a low cell supply voltage programming circuit" was invented by Navneet K. Jain (Milpitas, Calif.) and Mahbub Rashed (Cupertino, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A disclosed memory structure includes memory cells connected to first and second cell supply voltage lines. A programming circuit enables programming of a low cell supply voltage (Vcsl) on the first cell supply voltage line and includes transistors with different threshold voltages connected to ground and further connectable, via switches, to the first cell supply v...